FDFM2N111 |
RFQ for FDFM2N111 Required Field |
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| Technical/Catalog Information | FDFM2N111 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 4A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 4A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 273pF @ 10V |
| Power - Max | 800mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 3.8nC @ 4.5V |
| Package / Case | 6-MLP |
| FET Feature | Diode (Isolated) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDFM2N111 FDFM2N111 |
| Product | Manufacturers | Pack | D/C |
| FDFM2N111 | - | QFN-6 | 06+ |
Typical Application |
Features |
| Standard Buck Converter | 4 A, 20 V RDS(ON)= 100m @ VGS = 4.5 VRDS(ON)= 150m @ VGS = 2.5 VGS Low Profile - 0.8 mm maximun - in the new package MicroFET 3x3 mm |
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 20 | V |
| VGSS | Gate-Source Voltage | ±12 | V |
| ID | Drain Current -Continuous (Note 1a) | 4 | A |
| -Pulsed | 10 | ||
| VRRM | Schottky Repetitive Peak Reverse voltage | 20 | V |
| IO | Schottky Average Forward Current (Note 1a) | 2 | A |
| PD | Power dissipation (Steady State) (Note 1a) | 1.7 | W |
| Power dissipation (Steady State) (Note 1b) | 0.8 | ||
| TJ , TSTG |
Operating and Storage Junction Temperature Range | -55 to +150 |
